Part Number Hot Search : 
MUN2130 MBT3906 MAX66 LM25574 SR815 DTC114Y 60210 AM1013TR
Product Description
Full Text Search
 

To Download CM1000HA-24H Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE INSULATED TYPE
A B U - M4 THD (2 TYP.)
R
K P
E
M
G
B S - M8 THD (2 TYP.)
A
C
E
C
J
G
Q T - DIA. (4 TYP.) H
L F N
E
D
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1000HA-24H is a 1200V (VCES), 1000 Ampere Single IGBT Module.
Type CM Current Rating Amperes 1000 VCES Volts (x 50) 24
E
C
G E
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.12 4.330.01 1.840 Millimeters 130.0 110.00.25 46.75 Dimensions L M N P Q R S T U Inches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4
1.73+0.04/-0.02 44.0+1.0/-0.5 1.46+0.04/-0.02 37.0+1.0/-0.5 1.42 1.25 1.18 1.10 1.08 36.0 31.8 30.0 28.0 27.5
Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current (Tj 150C) Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C) Mounting Torque, M8 Main Terminal Mounting, Torque M6 Mounting Mounting, Torque M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - - Viso
CM1000HA-24H -40 to +150 -40 to +125 1200 20 1000 2000* 1000 2000* 5800 8.83 ~ 10.8 1.96 ~ 2.94 0.98 ~ 1.47 1600 2500
Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m N*m Grams Vrma
Static Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 100mA, VCE = 10V IC = 1000A, VGE = 15V IC = 1000A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 1000A, VGE = 15V IE = 1000A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.7 2.4 5000 - Max. 6 0.5 7.5 3.6** - - 3.5 Units mA A Volts Volts Volts nC Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 1000A, diE/dt = -2000A/s IE = 1000A, diE/dt = -2000A/s VCC = 600V, IC = 1000A, VGE1 = VGE2 = 15V, RG = 3.3 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 7.4 Max. 200 70 40 600 1500 1200 350 250 - Units nF nF nF ns ns ns ns ns C
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.022 0.050 0.018 Units C/W C/W C/W Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
2000
VGE = 20 (V) 1600 Tj = 25C
IC, (AMPERES)
15
12
2000
VCE = 10V Tj = 25C Tj = 125C
VCE(sat), (VOLTS)
5 VGE = 15V 4
1600 11
IC, (AMPERES)
1200 10 800
1200
3
800
2
400
9
87
400
1 Tj = 25C Tj = 125C
0
0
2
4
6
8
10
0 0 4 8 12 16 20
VGE, (VOLTS)
0
0
400
800
1200
1600
2000
VCE, (VOLTS)
IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
104 Tj = 25C
Tj = 25C
103
8
Cies, Coes, Cres, (nF)
103 6 IC = 2000A IC = 1000A
IE, (AMPERES)
102
Cies
4
Coes
102
101
Cres
2
IC = 400A 101 1.0
VGE = 0V
0
0
4
8
12
16
20
1.5
2.0
2.5
3.0
3.5
100 10-1
100
VCE, (VOLTS)
101
102
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
VEC, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
GATE CHARGE, VGE (TYPICAL)
104
103
103
20
16
SWITCHING TIME, (ns)
103
td(off)
VGE, (VOLTS) t rr, (ns)
VCC = 400V VCC = 600V
td(on) tf
102
Irr
102
Irr, (AMPERES)
t rr
12
8
102
tr
VCC = 600V VGE = 15V RG = 3.3 Tj = 125C
di/dt = -2000A/sec Tj = 25C
4 101 104
101 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
101 101
0 0 2000 4000
QG, (nC)
102
103
6000
8000
IE, (AMPERES)
Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE)
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
100
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.022C/W
100
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.05C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
Sep.1998


▲Up To Search▲   

 
Price & Availability of CM1000HA-24H

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X